Wide bandgap semiconductor (i.e., SiC and GaN) based power devices are the key for the next step toward the energy-efficient world. Sanan-IC offers a wide choice in foundry service of wide bandgap power devices, including MOSFET and SBD with different voltage rating for a full complement of traditional Si based devices.Sanan-IC also follows comprehensive qualification regime for its power devices to assure a reliable operation in various applications (e.g., consumer, industry and automotive).
Wide bandgap material technology such as Gallium Nitride (GaN) and Silicon Carbide (SiC) give more choice in circuit/system design of power conversion technology, and enable higher switching frequency, higher efficiency, and higher power density never before possible with Silicon MOSFETs. SAIC's GaN E-HEMT technology target serving consumer and industrial applications such as adapter/charger, telecom/server SMPS, wireless power, on board charger(OBC) with cost effective solutions.
SAIC has a SiC 4"/6" compatible process line, offers SiC SBD and MOSFET foundry services. The main features of SAIC's SiC foundry service includes: MOCVD epitaxy,high temperature ion implanter, high temperature activation, SiC wafer thinning, laser annealing, inline AVI test, laser dicing, and wafer level WAT/CP test.
650V/1200V SiC JBS
Power Factor Correction Circuit(PFC)
Switch Mode Power Supplies
Wide device rating: 2-40A
Short recovery time
Zero reverse recovery current